Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions

被引:4
|
作者
Chowdhury, Supria [1 ]
Ichimura, Masaya [1 ]
机构
[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan
关键词
PRECURSORS; GROWTH; MOCVD;
D O I
10.1143/JJAP.49.062302
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photochemical deposition (PCD) is a technique of film preparation from solutions by UV light illumination. In this study, GaSxOy thin films were prepared on fluorine-doped-tin-oxide-coated glass substrates by PCD from an aqueous solution of Ga-2(SO4)(3) and Na2S2O3. GaSxOy is a wide-band-gap semiconductor and suitable as a buffer layer material in solar cells. The as-deposited films were characterized by Auger electron spectroscopy, scanning electron microscopy and optical transmission spectroscopy. The O/Ga ratio was close to the stoichiometric ratio, 1.5, and the S/Ga ratio is much smaller, less than 0.3 for a film deposited under the optimum conditions. The film exhibited a wide energy band gap of 3.5 eV and a resistivity of the order of 10(2) Omega cm. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.062302
引用
收藏
页码:0623021 / 0623024
页数:4
相关论文
共 50 条
  • [21] Electrochemical deposition and characterization of CuGaxSyOz alloy thin films
    Chowdhury, Supria
    Ichimura, Masaya
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (04) : 252 - 256
  • [22] Role of pH in aqueous alkaline chemical bath deposition of lead sulfide thin films
    Chattarki, A. N.
    Kamble, S. S.
    Deshmukh, L. P.
    MATERIALS LETTERS, 2012, 67 (01) : 39 - 41
  • [23] Deposition of pure gold thin films from organometallic precursors
    Parkhomenko, Roman G.
    Trubin, Sergey V.
    Turgambaeva, Asiya E.
    Igumenov, Igor K.
    JOURNAL OF CRYSTAL GROWTH, 2015, 414 : 143 - 150
  • [24] Photoelectrochemical Deposition of CuInSe2 Thin Films
    Yang, Jia
    Liu, Fangyang
    Lai, Yanqing
    Li, Jie
    Liu, Yexiang
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2012, 15 (04) : D19 - D21
  • [25] Preparation and characterization of ZrO2:Sm amorphous thin films by solid state photochemical deposition method
    Cabello, G.
    Lillo, L.
    Caro, C.
    Chornik, B.
    Soto, M. A.
    del Rio, R.
    Tejos, M.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2010, 71 (09) : 1367 - 1372
  • [26] Electrodeposition of Chalcogenide ZnSe Thin Films with Tailored Compositions in Alkaline Aqueous Citrate Solutions
    Kim, Donguk
    Park, Kimoon
    Jung, Hyunsung
    Yoo, Bongyoung
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2016, 163 (07) : D300 - D304
  • [27] Atomic layer deposition of tantalum nitride based thin films from cyclopentadienyl type precursor
    Anacleto, A. Correia
    Zauner, A.
    Cany-Canian, D.
    Gatineau, J.
    Hugon, M. -C.
    THIN SOLID FILMS, 2010, 519 (01) : 367 - 372
  • [28] Atomic layer deposition of textured zinc nitride thin films
    Sinha, Soumyadeep
    Sarkar, Shaibal K.
    RSC ADVANCES, 2014, 4 (88) : 47177 - 47183
  • [29] Galvanostatic deposition of ZnO thin films
    Salazar, Raul
    Levy-Clement, Claude
    Ivanova, Valentina
    ELECTROCHIMICA ACTA, 2012, 78 : 547 - 556
  • [30] The Role of Counteranions in Solution Deposition of ZnS Thin Films on GaAs
    Zakay, Noy
    Rand, Shlomo
    Rashkovskiy, Alexander
    Maman, Nitzan
    Ezersky, Vladimir
    Golan, Yuval
    INORGANIC CHEMISTRY, 2024, 63 (51) : 24104 - 24114