Progressive development of superjunction power MOSFET devices

被引：20

作者：

Chen, Yu ^{[1
]}

Liang, Yung C. ^{[1
]}

Samudra, Ganesh S. ^{[1
]}

Yang, Xin ^{[2
]}

Buddharaju, Kavitha D. ^{[3
]}

Feng, Hanhua ^{[3
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Queens Univ Belfast, Inst Elect Commun & Informat Technol ECIT, Belfast BT3 9DT, Antrim, North Ireland

[3] Inst Microelect, Singapore 117684, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 01期

关键词：

power integrated circuits; power MOSFET; silicon unipolar limit; superjuction (SJ);

D O I：

10.1109/TED.2007.911344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The originally proposed superjunction (SJ) power MOSFET structure with interdigitated p-n columns is highly recognized for its higher voltage-blocking capability and lower Specific ON-state resistance. However, in practice, the performance of SJ devices is greatly handicapped due to difficulties in the formation of perfect cbarge-balanced p-n columns by the limitation of fabrication process technology, particularly, for devices with small p-n column widths at low voltage ratings. Recently developed structures of polysilicon-flanked and oxide-bypassed SJ MOSFETs are to overcome the conventional SJ device fabrication limitation. The follow-up development on extending the scope of these recently reported device structures to lateral SJ structures, which is suitable for SJ power integrated circuits, is reported for the first time. In this paper, detailed descriptions of the progressive development and the technical advancement of several SJ MOSFET structures are presented with both simulation and experimental results.

引用

页码：211 / 219

页数：9

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