Iron distribution in silicon after solar cell processing: Synchrotron analysis and predictive modeling

被引：39

作者：

Fenning, D. P. ^{[1
]}

Hofstetter, J. ^{[2
]}

Bertoni, M. I. ^{[1
]}

Hudelson, S. ^{[1
]}

Rinio, M. ^{[3
]}

Lelievre, J. F. ^{[4
]}

Lai, B. ^{[5
]}

del Canizo, C. ^{[2
]}

Buonassisi, T. ^{[1
]}

机构：

[1] MIT, Cambridge, MA 02139 USA

[2] Univ Politecn Madrid, Inst Energia Solar, E-28040 Madrid, Spain

[3] Fraunhofer Inst Solar Energy Syst ISE, Lab & Serv Ctr, D-45884 Gelsenkirchen, Germany

[4] Ctr Tecnol Silicio Solar CENTESIL, Getafe 28905, Spain

[5] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

IMPROVEMENT; IMPURITIES; TRANSITION;

D O I：

10.1063/1.3575583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is incomplete in wafers with high metal content, specifically ingot border material. Postdiffusion low-temperature annealing is not found to alter appreciably the size or spatial distribution of FeSi2 precipitates, although cell efficiency improves due to a decrease in iron interstitial concentration. Gettering simulations successfully model experiment results and suggest the efficacy of high- and low-temperature processing to reduce both precipitated and interstitial iron concentrations, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3575583]

引用

页数：3

共 19 条

[1] Metal precipitation at grain boundaries in silicon: Dependence on grain boundary character and dislocation decoration [J].