A 6-18 GHz 40 W Reactively Matched GaN MMIC Power Amplifier

被引：0
|
作者：
Litchfield, Michael [1 ]
Komiak, James J. [1 ]
机构：
[1] Technol Solut, BAE Syst, Nashua, NH 03062 USA
来源：
2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS | 2018年
关键词：
GaN; high power amplifier; reactively matched amplifier;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The design and performance of a two-stage, wideband, reactively matched power amplifier MMIC, fabricated in a 0.18 mu m No-Field-Plate Scaled-Channel GaN process, is presented. Measured results for the MMIC covering the 6-18 GHz frequency range demonstrate 21.7 dB average small-signal gain, 30.3W to 52.8W output power with a 40W average, and 13% to 30% power-added efficiency.
引用
收藏
页码：1348 / 1351
页数：4
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