Strain at Native SiO2/Si(111) Interface Characterized by Strain-Scanning Second-Harmonic Generation

被引：5

作者：

Zhao, Ji-Hong ^{[1
]}

Su, Wen ^{[1
]}

Chen, Qi-Dai ^{[1
]}

Jiang, Ying ^{[1
]}

Chen, Zhan-Guo ^{[1
]}

Jia, Gang ^{[1
]}

Sun, Hong-Bo ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 01期

关键词：

Biaxial strain; femtosecond laser; native SiO2/Si interface; second-harmonic generation; SURFACES; SILICON; LAYERS; SPECTROSCOPY; DEFORMATION; REFLECTION; SI(100); RAMAN; SI;

D O I：

10.1109/JQE.2010.2072907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A strain-scanning second-harmonic generation technique is proposed for high-sensitivity measurement of weak strain in film surfaces or interfaces. The basic idea is the sequential application of tensile and compressive strains to a strained film sample. From the strain-dependent second-harmonic generation (SHG) intensity, the type of the strain can be easily judged from whether the SHG is enhanced or weakened, and its magnitude can be precisely calibrated by an externally applied strain that is known. Thus, the built-in strain of a SiO2/Si interface could be determined as tensile with a magnitude of 3.07 x 10(-4).

引用

页码：55 / 59

页数：5

共 18 条

[1]

[Anonymous], 1989, THEORY PLATES SHELLS

[2]

Bir G. L., 1974, SYMMETRY STRAIN INDU

[3] IDENTIFICATION OF STRAINED SILICON LAYERS AT SI-SIO2 INTERFACES AND CLEAN SI SURFACES BY NONLINEAR-OPTICAL SPECTROSCOPY [J].