Pentacene based Thin Film Transistors with High-k Dielectric Nd2O3 as a Gate Insulator

被引：22

作者：

Sarrna, R. ^{[1
]}

Saikia, D. ^{[1
,2
]}

Saikia, Puja ^{[2
]}

Saikia, P. K. ^{[2
]}

Baishya, B. ^{[2
]}

机构：

[1] JB Coll, Dept Phys, Thin Film Lab, Jorhat, Assam, India

[2] Dibrugarh Univ, Dibrugarh, Assam, India

来源：

BRAZILIAN JOURNAL OF PHYSICS | 2010年 / 40卷 / 03期

关键词：

Pentacene; Organic Thin Film Transistors; Low Threshold voltage; Rare earth oxide Nd2O3; Two Step Deposition; FIELD-EFFECT TRANSISTORS; RARE-EARTH-OXIDES; ELECTRICAL-PROPERTIES; DEVICES; LA2O3;

D O I：

10.1590/S0103-97332010000300019

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with High-k Dielectric Nd2O3. Use of high dielectric constant (high-k) gate insulator Nd2O3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 x 10(4) and mobility is 0.13cm(2)/V.s. Pentacene film is deposited on Nd2O3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature.

引用

页码：357 / 360

页数：4

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