A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications

被引：67
作者：
Deng, JX [1 ]
Gudem, PS
Larson, LE
Asbeck, PM
机构：
[1] Univ Calif San Diego, Dept Elect & Comp Engn, Ctr Wireless Commun, La Jolla, CA 92093 USA
[2] Qualcomm Inc, San Diego, CA 92121 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 02期
关键词：
average power efficiency; dynamic biasing; HBTs; intermodulation distortion; linearity; power amplifiers (PAs); Volterra series; wide-band code division multiple access (WCDMA);
D O I：
10.1109/TMTT.2004.840629
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linearity of a silicon-germanium (SiGe) HBT power amplifier (PA) is analyzed with the help of a power-dependent coefficient Volterra technique.-The effect of emitter inductance is included and the dominant sources of nonlinearity are identified. X,dynamic current biasing technique is developed to improve the average power efficiency for wide-band code-division multiple-access (WCDMA) PAs. The average power efficiency is improved by more than a factor of two compared to a typical class-All operation, while the power gain keeps roughly constant. The measured adjacent channel power ratio with 5- and 10-MHz offsets at 23.9-dBm average channel output power are -33 and - 58.8 dBc, respectively, and satisfies the Third-Generation, Partnership Project WCDMA specifications. The output power at the 1-dB compression point is 25.9 dBm.
引用
收藏
页码：529 / 537
页数：9
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