In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry

被引：30

作者：

Sudo, S ^{[1
]}

Nakano, Y ^{[1
]}

Sugiyama, M ^{[1
]}

Shimogaki, Y ^{[1
]}

Komiyama, H ^{[1
]}

Tada, K ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn, Sch Engn, Bunkyo Ku, Tokyo 113, Japan

来源：

THIN SOLID FILMS | 1998年 / 313卷

关键词：

spectroscopic ellipsometry; kinetic ellipsometry; MOVPE; in-situ monitoring; arsenic-phosphorus exchange; organic group V precursors;

D O I：

10.1016/S0040-6090(97)00894-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In InGaAs/InP heterostructures, interdiffusion of arsenic and phosphorus at the hetero-interfaces during epitaxial growth degrades the interface abruptness. This is a serious problem when a very thin InGaAs/InP quantum well is required. In this paper, spectroscopic and kinetic ellipsometry are used to monitor the As-P exchange in-situ in metal-organic vapor phase epitaxy (MOVPE) with TBAs and TBP as the group V precursors. As a result, it is found that the monitoring of As-P exchange is possible by kinetic ellipsometry and that useful information for improving the gas switching sequence is acquired from such observations. Information from this in-situ kinetic ellipsometry has been confirmed to agree well with ex-situ photoluminescence and transmission electron microscope (TEM) observations. (C) 1998 Elsevier Science S.A.

引用

页码：604 / 608

页数：5

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