In1-xMnxSb -: a narrow-gap ferromagnetic semiconductor

被引：63
作者：
Wojtowicz, T [1 ]
Cywinski, G
Lim, WL
Liu, X
Dobrowolska, M
Furdyna, JK
Yu, KM
Walukiewicz, W
Kim, GB
Cheon, M
Chen, X
Wang, SM
Luo, H
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Elect Mat Program, Div Sci Mat, Berkeley, CA 94720 USA
[4] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 24期
关键词：
D O I：
10.1063/1.1583142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A narrow-gap ferromagnetic In1-xMnxSb semiconductor alloy was grown by low-temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In1-xMnxSb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T-C ranging up to 8.5 K. The observed values of T-C agree well with the existing models of carrier-induced ferromagnetism. (C) 2003 American Institute of Physics.
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页码：4310 / 4312
页数：3
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