An analytical model of power bipolar transistor for circuit simulation

被引：0
|
作者：
Fatemizadeh, B
Lauritzen, PO
机构：
来源：
1996 IEEE WORKSHOP ON COMPUTERS IN POWER ELECTRONICS | 1996年
关键词：
D O I：
暂无
中图分类号：
TP39 [计算机的应用];
学科分类号：
081203 ; 0835 ;
摘要：
This paper presents a new BJT modeling approach using an analytical method which provides sufficient accuracy for most power electronics applications with fast simulation times, This new analytical model includes all important physical effects: recombination in base and emitter, high injection, collector conductivity modulation, quasi-saturation, carrier velocity saturation, displacement current.
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页码：132 / 135
页数：4
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