Barrier-free Cu metallization with a novel copper seed layer containing various insoluble substances

被引：15

作者：

Chu, J. P. ^{[1
]}

Lin, C. H. ^{[2
]}

John, V. S. ^{[3
,4
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Polymer Engn, Taipei 10607, Taiwan

[2] Chin Min Inst Technol, Dept Elect Mat, Tou Fen 35153, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Mat Engn, Chilung 20224, Taiwan

[4] TDMNS Coll, Dept Phys, T Kallikulam 627113, India

来源：

VACUUM | 2008年 / 83卷 / 03期

关键词：

Barrier-free metallization; Copper seed layer; Sputtering;

D O I：

10.1016/j.vacuum.2008.04.032

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article reports novel copper seed layers containing various insoluble substances for applications in barrierless metallization. Based on XRD, FIB, TEM, SIMS, resistivity and leakage current measurement results, we conclude that the doping trace amounts of insoluble substances (W, WN) in the seed layer can inhibit the diffusion of copper into barrier-free Si, and that copper does not react with Si at temperatures up to similar to 530 degrees C. Our results reveal that these layers can possibly be used in the advanced barrierless metallization process. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：668 / 671

页数：4

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