Reliability analysis and modeling of power MOSFETs in the 42-V-PowerNet

被引：62

作者：

Castellazzi, Alberto ^{[1
]}

Gerstenmaier, York C.

Wachutka, Gerhard K. M.

机构：

[1] Swiss Fed Inst Technol, Integrated Syst Lab, CH-8092 Zurich, Switzerland

[2] Siemens AG, Corp Technol, D-81730 Munich, Germany

[3] Univ Bundeswehr, Inst Elect, D-85577 Neubiberg, Germany

[4] Tech Univ Munich, Inst Phys Electrotechnol, D-80333 Munich, Germany

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2006年 / 21卷 / 03期

关键词：

electrothermal effects; modeling; power metal-oxide semiconductor field-effect transistors (MOSFETs); reliability;

D O I：

10.1109/TPEL.2006.872382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper analyzes the operation of PowerMOSFETs in the 42-V-PowerNet and shows that very stressful conditions are encountered, which can lead to severe reliability problems. To enable thorough investigations by circuit simulations an accurate physics-based compact model of the devices is proposed: it includes all important electrothermal effects relevant to the description of the observed failure mechanisms. By means of an advanced thermal-modeling approach, multichip assemblies can be accurately described, including mutual heating effects between neighboring devices. Some properly chosen examples demonstrate the validity of the model and its usefulness for reliability investigations.

引用

页码：603 / 612

页数：10

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