Hot electron spectroscopy of the GaAs/AlAs/GaAs band structure

被引：1

作者：

Pacher, C ^{[1
]}

Kast, M

Roch, T

Strasser, G

Gornik, E

机构：

[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria

[2] Vienna Tech Univ, Mikrostrukturzentrum, A-1040 Vienna, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot electron spectroscopy was used to study transport through two GaAs/AlAs/GaAs heterostructures with undoped AlAs layers of 10 and 13 nm width. We observed transport through the individual bound states of the quantum well formed in the X-valley of the GaAs/AlAs/GaAs system. From the energetic positions of these bound states, we derived X-AlAs - Gamma(GaAs) = 136 meV for both samples and m* (X,AlAs) = (0.8 +/- 0.1)m(0) for the 10 nm sample and m*(X,AlAs) = (0.7 +/- 0.1)m(0) for the 13 nm sample.

引用

页码：S102 / S103

页数：2

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