Hot electron spectroscopy of the GaAs/AlAs/GaAs band structure

被引：1

作者：

Pacher, C ^{[1
]}

Kast, M

Roch, T

Strasser, G

Gornik, E

机构：

[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria

[2] Vienna Tech Univ, Mikrostrukturzentrum, A-1040 Vienna, Austria

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期

关键词：

D O I：

10.1088/0268-1242/19/4/037

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot electron spectroscopy was used to study transport through two GaAs/AlAs/GaAs heterostructures with undoped AlAs layers of 10 and 13 nm width. We observed transport through the individual bound states of the quantum well formed in the X-valley of the GaAs/AlAs/GaAs system. From the energetic positions of these bound states, we derived X-AlAs - Gamma(GaAs) = 136 meV for both samples and m* (X,AlAs) = (0.8 +/- 0.1)m(0) for the 10 nm sample and m*(X,AlAs) = (0.7 +/- 0.1)m(0) for the 13 nm sample.

引用

页码：S102 / S103

页数：2

共 50 条

[31] COMMUTATIVITY OF THE GAAS/ALAS (100) BAND OFFSET [J].

YU, ET ;

CHOW, DH ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :391-394

[32] COMMUTATIVITY OF THE GAAS/ALAS(100) BAND OFFSET [J].

YU, ET ;

CHOW, DH ;

MCGILL, TC .

PHYSICAL REVIEW B, 1988, 38 (17) :12764-12767

[33] Tuning GaAs/AlAs band discontinuities and influence of GaAs at different growth temperatures [J].

Li, Yongping ;

Lan, Qing ;

Wu, Zhenglong ;

Zhou, Dayong ;

Kong, Yunchuan ;

Niu, Zhichuan ;

Tian, Qiang ;

Yang, Xizhen ;

Wang, Yafei .

2003, Science Press (24)

[34] Electronic structure of (001)(AlAs)(k)(GaAs)(l)(AlAs)(m)(GaAs)(n) superlattices [J].

FernandezAlvarez, L ;

Monsivais, G ;

Velasco, VR .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (45) :8859-8867

[35] RAMAN-SPECTROSCOPY OF HOT-ELECTRON RELAXATION IN GAAS [J].

TSANG, JC ;

KASH, JA ;

JHA, SS .

PHYSICA B & C, 1985, 134 (1-3) :184-188

[36] Band structure engineering and vacancy induced metallicity at the GaAs-AlAs interface [J].

Kahaly, M. Upadhyay ;

Nazir, S. ;

Schwingenschloegl, U. .

APPLIED PHYSICS LETTERS, 2011, 99 (12)

[37] Vertical transport of hot electrons in GaAs/AlAs superlattices [J].

Mirlin, DN ;

Sapega, VF ;

Ustinov, VM .

SEMICONDUCTORS, 2004, 38 (05) :576-580

[38] Vertical transport of hot electrons in GaAs/AlAs superlattices [J].

D. N. Mirlin ;

V. F. Sapega ;

V. M. Ustinov .

Semiconductors, 2004, 38 :576-580

[39] Hot electron scattering rate in p-doped MQW structures GaAs/AlAs [J].

Reshina, II ;

Mirlin, DN ;

Perel, VI ;

Dobin, AY ;

Agranov, AG .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 204 (01) :181-183

[40] Valence band structures of GaAs/AlAs lateral superlattices [J].

Li, SS ;

Zhu, BF ;

Xia, JB .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (13) :2809-2820

← 1 2 3 4 5 →