Hot electron spectroscopy of the GaAs/AlAs/GaAs band structure

被引：1
|
作者：
Pacher, C [1 ]
Kast, M
Roch, T
Strasser, G
Gornik, E
机构：
[1] Vienna Tech Univ, Inst Festkorperelekt, A-1040 Vienna, Austria
[2] Vienna Tech Univ, Mikrostrukturzentrum, A-1040 Vienna, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 04期
关键词：
D O I：
10.1088/0268-1242/19/4/037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hot electron spectroscopy was used to study transport through two GaAs/AlAs/GaAs heterostructures with undoped AlAs layers of 10 and 13 nm width. We observed transport through the individual bound states of the quantum well formed in the X-valley of the GaAs/AlAs/GaAs system. From the energetic positions of these bound states, we derived X-AlAs - Gamma(GaAs) = 136 meV for both samples and m* (X,AlAs) = (0.8 +/- 0.1)m(0) for the 10 nm sample and m*(X,AlAs) = (0.7 +/- 0.1)m(0) for the 13 nm sample.
引用
收藏
页码：S102 / S103
页数：2
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