Molecular plating of Am-241 on a Schottky metal contact

被引：1

作者：

Hoffman, M. Kathryn ^{[1
,2
]}

Spitz, Henry B. B. ^{[2
]}

Bissmeyer, Patrick H. H. ^{[2
]}

Mangu, Sriharsha ^{[2
]}

Xue, Sha ^{[1
]}

Downing, R. Gregory ^{[1
]}

Hlinka, Vasil ^{[1
]}

Cao, Lei R. R. ^{[3
]}

机构：

[1] AwareAbil Technol, 1275 Kinnear Rd,Suite 246, Columbus, OH 43212 USA

[2] Univ Cincinnati, Dept Mech Engn, Nucl & Radiol Engn Program, 2600 Clifton Ave, Cincinnati, OH 45221 USA

[3] Ohio State Univ, Dept Mech & Aerosp Engn, Nucl Engn Program, 19th Ave, Columbus, OH 43210 USA

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY | 2022年 / 331卷 / 12期

基金：

美国国家科学基金会;

关键词：

Molecular plating; Electrodeposition; americium-241; Silicon carbide; ACTINIDE TARGETS; ELECTRODEPOSITION METHODS;

D O I：

10.1007/s10967-022-08504-w

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

This paper describes a molecular plating method in which americium-241 (Am-241) was directly deposited onto a 4.8 mm x 4.8 mm Schottky electrode of 4 H-SiC devices. The plating solution consists of isopropanol and dilute nitric acid. Plating was conducted for one hour using a high voltage between 300 and 600 V to plate the radionuclide. A gasket with an aluminized mylar contact surface was added to a traditional disposable electrodeposition cell to accommodate the small size of the diode. Deposition recoveries of 50-65% have been consistently achieved using 20-30 nCi of Am-241 with minimal damage to the diode surface.

引用

页码：5423 / 5431

页数：9

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