A Low Minimum Detectable Power, High Dynamic Range, V-Band CMOS Millimeter-Wave Logarithmic Power Detector

被引:0
作者
Chou, Chien-Chang [1 ]
Lai, Wen-Chian [1 ]
Huang, Tzuen-Hsi [1 ]
Chuang, Huey-Ru [1 ]
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan, Taiwan
来源
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年
关键词
90-nm; CMOS; millimeter-wave; power detector; successive detection logarithmic amplifier (SDLA); V-band;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a V-Band logarithmic power detector fabricated in 90-nm CMOS technology. The topology of successive detection logarithmic amplifier (SDLA) is adopted for high dynamic range. Instead of using traditional differential limiting amplifiers, millimeter-wave (MMW) amplifiers are applied for the gain cells to achieve the desired performance. A three-stage SDLA test key was implemented. The measured results at 52 GHz show that the dynamic range is 50 dB and the logarithmic errors are within +/- 1.5 dB. From 50 to 62 GHz, the dynamic range is better than 35 dB, and the logarithmic errors are within +/- 2 dB. The total power consumption and chip size are 20 mW and 0.66 mm(2), respectively. Compared to the previously reported millimeter-wave (MMW) power detectors, the proposed work features a wider dynamic range and reasonably linear logarithmic curve response to RF input power.
引用
收藏
页码:638 / 641
页数:4
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