Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

被引:34
作者
Liu, Lu [1 ]
Lo, Chien-Fong [1 ]
Xi, Yuyin [1 ]
Wang, Yuxi [1 ]
Ren, Fan [1 ]
Pearton, Stephen J. [2 ]
Kim, Hong-Yeol [3 ]
Kim, Jihyun [3 ]
Fitch, Robert C. [4 ]
Walker, Dennis E., Jr. [4 ]
Chabak, Kelson D. [4 ]
Gillespie, James K. [4 ]
Tetlak, Stephen E. [4 ]
Via, Glen D. [4 ]
Crespo, Antonio [4 ]
Kravchenko, Ivan I. [5 ]
机构
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] Korea Univ, Dept Chem & Biol Engn, Seoul 136713, South Korea
[4] USAF, Sensors Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA
[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37830 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 02期
关键词
IRRADIATION; RADIATION;
D O I
10.1116/1.4788904
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 5 x 10(15)/cm(2) and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5 MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121-336 cm(-1) over the range of proton energies employed in this study. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4788904]
引用
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页数:7
相关论文
共 21 条
[1]   Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE [J].
Cai, SJ ;
Tang, YS ;
Li, R ;
Wei, YY ;
Wong, L ;
Chen, YL ;
Wang, KL ;
Chen, M ;
Zhao, YF ;
Schrimpf, RD ;
Keay, JC ;
Galloway, KF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :304-307
[2]   Electric-Field-Driven Degradation in OFF-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors [J].
Chang, Chih-Yang ;
Douglas, E. A. ;
Kim, Jinhyung ;
Lu, Liu ;
Lo, Chien-Fong ;
Chu, Byung-Hwan ;
Cheney, D. J. ;
Gila, B. P. ;
Ren, F. ;
Via, G. D. ;
Cullen, David A. ;
Zhou, Lin ;
Smith, David J. ;
Jang, Soohwan ;
Pearton, S. J. .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2011, 11 (01) :187-193
[3]   Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors [J].
Douglas, E. A. ;
Chang, C. Y. ;
Gila, B. P. ;
Holzworth, M. R. ;
Jones, K. S. ;
Liu, L. ;
Kim, Jinhyung ;
Jang, Soohwan ;
Via, G. D. ;
Ren, F. ;
Pearton, S. J. .
MICROELECTRONICS RELIABILITY, 2012, 52 (01) :23-28
[4]   Comparison of passivation layers for AlGaN/GaN high electron mobility transistors [J].
Fitch, R. C. ;
Walker, D. E., Jr. ;
Chabak, K. D. ;
Gillespie, J. K. ;
Kossler, M. ;
Trejo, M. ;
Crespo, A. ;
Liu, L. ;
Kang, T. S. ;
Lo, C. -F. ;
Ren, F. ;
Cheney, D. J. ;
Pearton, S. J. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (06)
[5]   Effects of traps formed by threading dislocations on off-state breakdown characteristics in GaN buffer layer in AlGaN/GaN heterostructure field-effect transistors [J].
Hinoki, Akihiro ;
Kikawa, Junjiroh ;
Yamada, Tomoyuki ;
Tsuchiya, Tadayoshi ;
Kamiya, Shinichi ;
Kurouchi, Masahito ;
Kosaka, Kenichi ;
Araki, Tsutomu ;
Suzuki, Akira ;
Nanishi, Yasushi .
APPLIED PHYSICS EXPRESS, 2008, 1 (01)
[6]   Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors [J].
Hu, XW ;
Karmarkar, AP ;
Jun, B ;
Fleetwood, DM ;
Schrimpf, RD ;
Geil, RD ;
Weller, RA ;
White, BD ;
Bataiev, M ;
Brillson, LJ ;
Mishra, UK .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (06) :1791-1796
[7]   The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors [J].
Hu, XW ;
Choi, BK ;
Barnaby, HJ ;
Fleetwood, DM ;
Schrimpf, RD ;
Lee, SC ;
Shojah-Ardalan, S ;
Wilkins, R ;
Mishra, UK ;
Dettmer, RW .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (02) :293-297
[8]   Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers [J].
Karmarkar, AP ;
Jun, B ;
Fleetwood, DM ;
Schrimpf, RD ;
Weller, RA ;
White, BD ;
Brillson, LJ ;
Mishra, UK .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) :3801-3806
[9]   AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons [J].
Kim, Hong-Yeol ;
Kim, Jihyun ;
Yun, Sang Pil ;
Kim, Kye Ryung ;
Anderson, Travis J. ;
Ren, Fan ;
Pearton, S. J. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (07) :H513-H515
[10]   Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protons [J].
Kim, Hong-Yeol ;
Anderson, Travis ;
Mastro, Michael A. ;
Freitas, Jaime A., Jr. ;
Jang, Soohwan ;
Hite, Jennifer ;
Eddy, Charles R., Jr. ;
Kim, Jihyun .
JOURNAL OF CRYSTAL GROWTH, 2011, 326 (01) :62-64