Level shifter embedded in drive circuits with amorphous silicon TFTs

被引：38

作者：

Bae, BS ^{[1
]}

Choi, JW ^{[1
]}

Oh, JH ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] Kyung Hee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 03期

关键词：

amorphous semiconductors; integrated circuits; shift registers; thin-film transistors (TFTs);

D O I：

10.1109/TED.2005.864383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A drive circuit embedded with a level shifter was fabricated with conventional a-Si:H thin-film transistor (TFT) process. Two cascaded hootstrapped inverters were fabricated for the level shifter. The proposed level shifter shifts an input signal to a high voltage, for example, from 5 to 30 V. The level shifter embedded driver with a-Si:H TFT operates well for the input 5-V start pulse and clocks, and the 4th output of the driver shows 30.3-V output. The level shifter is stable under operation even though there is a threshold voltage shift of a-Si:H TFT. The stability of the driver was also investigated.

引用

页码：494 / 498

页数：5

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