New Insights into the Physical Origin of Negative Capacitance and Hysteresis in NCFETs

被引：0

作者：

Wang, Huimin ^{[1
]}

Yang, Mengxuan ^{[1
]}

Huang, Qianqian ^{[1
,2
]}

Zhu, Kunkun ^{[1
]}

Zhao, Yang ^{[1
]}

Liang, Zhongxin ^{[1
]}

Chen, Cheng ^{[1
]}

Wang, Zhixuan ^{[1
]}

Zhong, Yuan ^{[1
]}

Zhang, Xing ^{[1
]}

Huang, Ru ^{[1
,2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, direct experimental observation of negative capacitance (NC) in a standalone ferroelectric (FE) capacitor is reported for the first time, which proves that the physical origin of NC is the domain switching dynamics rather than the stabilized switching. Based on this origin, the "dynamic polarization (DP) matching", different from the traditional capacitance matching, is rigorously derived and verified to be the prerequisite for sub-60mV/dec subthreshold swing (SS) in NCFET. The proposed DP matching can accurately describe and predict the features of NCFET based on our developed device model, showing that the SS and hysteresis are highly sensitive to the input sweeping voltage and FE switching dynamics, as well as other device parameters. Moreover, an intrinsic conflict is found between hysteresis and SS optimization. This work provides new understanding for the NCFET mechanism.

引用

页数：4

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