Electron spin resonance of paramagnetic defects and related charge carrier traps in complex oxide scintillators

被引:22
作者
Laguta, V. V. [1 ]
Nikl, M. [1 ]
机构
[1] AS CR, Inst Phys, Prague 16253, Czech Republic
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2013年 / 250卷 / 02期
关键词
electron spin resonance; point defects; polarons; scintillators; BOUND-SMALL POLARONS; PBWO4; CRYSTAL; CENTERS;
D O I
10.1002/pssb.201200502
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In the family of application-important complex, oxide single crystal scintillators based on tungstates, aluminum perovskites, and yttrium (lutetium) orthosilicates, selected results of electron spin resonance study are presented. They are focused on various point defects, which participate in the processes of charge carriers transfer and capture. Particular attention is paid to the most natural defects inevitably present in oxide materials such as anion and cation vacancies, antisite defects, self-trapped electron, and hole states. Current understanding of the nature of such charge trapping states and mechanisms of their creation in the selected oxide scintillation materials are discussed as well.
引用
收藏
页码:254 / 260
页数:7
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