Atomistic model of nitrogen-pair diffusion in silicon

被引：21

作者：

Sawada, H

Kawakami, K

Ikari, A

Ohashi, W

机构：

[1] Nippon Steel Corp Ltd, Adv Technol Res Labs, Chiba 2938511, Japan

[2] Nippon Steel Corp Ltd, Adv Technol Res Labs, Yamaguchi 7430063, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.65.075201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

First-principles pseudopotential calculations have been performed to investigate an atomistic model of nitrogen diffusion in silicon crystal. The calculated activation energy of the nitrogen diffusion agrees fairly well with the experimental value of a nitrogen pair, at least as far as the processes in which one of the nitrogen atoms moves first and then the other follows are concerned.

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页码：1 / 5

页数：5

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