The Electron Transport Coefficients of Boron and Silicon Plasma

被引：20

作者：

Apfelbaum, E. M. ^{[1
]}

机构：

[1] RAS, Joint Inst High Temp, Izhorskaya 13 Bld 2, Moscow 125412, Russia

来源：

CONTRIBUTIONS TO PLASMA PHYSICS | 2013年 / 53卷 / 4-5期

关键词：

Conductivity; chemical composition; plasma of semiconductor; DENSE-PLASMAS; CONDUCTIVITY; IONIZATION; TRIMER; DIMER; MODEL;

D O I：

10.1002/ctpp.201200078

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

The conductivity, thermal conductivity and thermal power of Silicon and Boron plasma have been calculated within the relaxation time approximation. The plasma composition has been obtained by means of correspond-ing system of coupled mass action laws. We have considered the atom ionization up to +4. The results of our simulations are in good agreement with recent measurement data at T 10 kK. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：317 / 325

页数：9

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