H-plane 3-dB hybrid ring of high isolation in substrate-integrated rectangular waveguide (SIRW)

被引:27
作者
Che, WQ [1 ]
Deng, K
Yung, EKN
Wu, K
机构
[1] Nanjing Univ Sci & Technol, Dept Elect Engn, Nanjing, Peoples R China
[2] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
[3] Ecole Polytech Montreal, Poly Grames Res Ctr, Montreal, PQ, Canada
关键词
H-plane 3-dB hybrid ring; substrate integrated rectangular waveguide (SIRW);
D O I
10.1002/mop.21392
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An H-plane hybrid ring 3-dB power divider constructed with substrate integrated rectangular waveguide (SIRW) is proposed. Theoretical simulations are carried out at the X- and Ka-bands. The results show that the isolation between two output ports is high lip to 35 dB and good 3-dB power division within the band of interest is observed also, that is, less than 0.3-dB derivation in the band of interest. In addition, the simulation results at the X-band shows a bandwidth of 10% at -15 dB. A prototype in the Ka-band is fabricated and the measured data at the Ka-band shows a bandwidth of 7% at -15 dB, in good agreement with simulation. (c) 2006 Wiley Periodicals, Inc.
引用
收藏
页码:502 / 505
页数:4
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