[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
|
2013年
/
31卷
/
05期
基金:
加拿大自然科学与工程研究理事会;
关键词:
SILICON;
NUCLEATION;
D O I:
10.1116/1.4821550
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The phase formation sequence during the thermally induced solid-state reaction of a 10-nm-thick magnetron-sputtered Ni film with a Si(001) substrate amorphized by ion implantation (a-Si) is investigated using a combination of in situ temperature-resolved x-ray diffraction and ex situ x-ray pole figure analyses, transmission electron microscopy, and Rutherford backscattering spectrometry. Our results reveal (1) that the metastable theta-phase grows from delta-Ni2Si and directly transforms into NiSi and (2) that cleaving the as-prepared, amorphized samples are often subject to a spontaneous reaction possibly resulting from cleaving. In the spontaneously reacted samples, a mixture of theta and NiSi is observed from the beginning of the thermal treatment. The theta phase exhibits a (110) fiber texture with a +/- 10 degrees misorientation, which is then inherited by NiSi. The rest of the phase sequence is the same as for nonreacted samples, the NiSi2 growing from 390 degrees C if the amorphized Si is not completely consumed. (C) 2013 American Vacuum Society.