Thin film Ni-Si solid-state reactions: Phase formation sequence on amorphized Si

被引:3
作者
Turcotte-Tremblay, Pierre [1 ]
Guihard, Matthieu [1 ]
Gaudet, Simon [2 ]
Chicoine, Martin [1 ]
Lavoie, Christian [3 ]
Desjardins, Patrick [2 ]
Schiettekatte, Francois [1 ]
机构
[1] Univ Montreal, Dept Phys, Regrp Quebecois Mat Pointe, Montreal, PQ H3C 3J7, Canada
[2] Ecole Polytech, Dept Genie Phys, Regrp Quebecois Mat Pointe, Montreal, PQ H3C 3A7, Canada
[3] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 05期
基金
加拿大自然科学与工程研究理事会;
关键词
SILICON; NUCLEATION;
D O I
10.1116/1.4821550
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The phase formation sequence during the thermally induced solid-state reaction of a 10-nm-thick magnetron-sputtered Ni film with a Si(001) substrate amorphized by ion implantation (a-Si) is investigated using a combination of in situ temperature-resolved x-ray diffraction and ex situ x-ray pole figure analyses, transmission electron microscopy, and Rutherford backscattering spectrometry. Our results reveal (1) that the metastable theta-phase grows from delta-Ni2Si and directly transforms into NiSi and (2) that cleaving the as-prepared, amorphized samples are often subject to a spontaneous reaction possibly resulting from cleaving. In the spontaneously reacted samples, a mixture of theta and NiSi is observed from the beginning of the thermal treatment. The theta phase exhibits a (110) fiber texture with a +/- 10 degrees misorientation, which is then inherited by NiSi. The rest of the phase sequence is the same as for nonreacted samples, the NiSi2 growing from 390 degrees C if the amorphized Si is not completely consumed. (C) 2013 American Vacuum Society.
引用
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页数:10
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