The formation of light emitting cerium silicates in cerium-doped silicon oxides

被引：33

作者：

Li, Jing ^{[1
]}

Zalloum, Othman

Roschuk, Tyler

Heng, Chenglin

Wojcik, Jacek

Mascher, Peter

机构：

[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4K1, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

annealing; cerium; cyclotron resonance; photoluminescence; plasma CVD; silicon compounds; thin films; transmission electron microscopy; GEL; FILMS; GLASS; CE3+;

D O I：

10.1063/1.3067871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N-2 at 1200 degrees C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce2Si2O7 or Ce-4.667 (SiO4)(3)O], the presence of which was confirmed by high resolution transmission electron microscopy.

引用

页数：3

共 20 条

[1] Effects of annealing and Al co-doping on the photoluminescence of Ce3+-doped silica prepared by a sol-gel process [J].

Bi, HJ ;

Cai, WP ;

Shi, HZ ;

Yao, BD ;

Zhang, LD .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (19) :2369-2372

[2] Violet/blue light-emitting cerium silicates [J].

Choi, WC ;

Lee, HN ;

Kim, EK ;

Kim, Y ;

Park, CY ;

Kim, HS ;

Lee, JY .

APPLIED PHYSICS LETTERS, 1999, 75 (16) :2389-2391

[3]

Fitting HJ, 2002, RADIAT EFF DEFECT S, V157, P575, DOI [10.1080/10420150215756, 10.1080/1042015021000051891]

[4] Recent developments in rare-earth doped materials for optoelectronics [J].

Kenyon, AJ .

PROGRESS IN QUANTUM ELECTRONICS, 2002, 26 (4-5) :225-284

[5]

Li J., 2008, ADV OPT TECHNOL

[6]

Lockwood D.J., 1998, Light emission in silicon: from physics to devices

[7] OPTICAL-CENTERS OF CERIUM IN SILICA GLASSES OBTAINED BY THE SOL-GEL PROCESS [J].

MALASHKEVICH, GE ;

PODDENEZHNY, EN ;

MELNICHENKO, IM ;

BOIKO, AA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 188 (1-2) :107-117

[8] Efficient luminescence and energy transfer in erbium silicate thin films [J].

Miritello, Maria ;

Lo Savio, Roberto ;

Iacona, Fabio ;

Franzo, Giorgia ;

Irrera, Alessia ;

Piro, Alberto M. ;

Bongiorno, Corrado ;

Priolo, Francesco .

ADVANCED MATERIALS, 2007, 19 (12) :1582-+

[9] Violet/blue emission from epitaxial cerium oxide films on silicon substrates [J].

Morshed, AH ;

Moussa, ME ;

Bedair, SM ;

Leonard, R ;

Liu, SX ;

ElMasry, N .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1647-1649

[10] Radiative decay of vacuum-ultraviolet excitation of silica synthesized by molecular precursors of Si-Si sites: An indicator of intracenter relaxation of neutral oxygen vacancies [J].

Paleari, A ;

Chiodini, N ;

Di Martino, D ;

Meinardi, F .

PHYSICAL REVIEW B, 2005, 71 (07)

← 1 2 →