Another way to investigate the characteristics of Time-Dependent Dielectric Breakdown of ultra-thin oxides

被引：0

作者：

Mu, FC ^{[1
]}

Xu, MZ ^{[1
]}

Tan, CH ^{[1
]}

Duan, XR ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Comparing the characteristics of gate voltage shift (delta V-gw) to Time-Dependent Dielectric Breakdown (i.e., TDDB), it is shown that both gate voltage shift (delta V-gw) and TDDB are of a single mode in Weibull distribution, field acceleration factor and thermal activation energy are similar. Qualitatively, gate voltage shift and TDDB are caused by the same mechanism. Thus, the characteristics of TDDB can be manifested by the characteristics of V, degradation. The extrapolated lifetime from "E" model is more reasonable than that from "1/E" model. Like the lifetime extrapolation for TDDB, "1/E" model significantly overestimates the oxide lifetime.

引用

页码：1010 / 1013

页数：4

共 8 条

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