Tailoring Copper Island Density for Copper Plating on a RuTa Substrate

被引：7

作者：

Nagar, M. ^{[1
]}

Vereecken, P. M. ^{[1
,3
]}

Radisic, A. ^{[1
]}

Strubbe, K. ^{[2
]}

机构：

[1] Vzw, IMEC, B-3001 Louvain, Belgium

[2] Univ Ghent, Dept Inorgan & Phys Chem, B-9000 Ghent, Belgium

[3] Katholieke Univ Leuven, Ctr Surface Chem & Catalysis, B-3001 Leuven, Belgium

来源：

ELECTROCHEMICAL ENGINEERING FOR THE 21ST CENTURY (DEDICATED TO RICHARD C. ALKIRE) | 2010年 / 28卷 / 29期

关键词：

ELECTRODEPOSITION; NUCLEATION; BARRIER; GROWTH; CU;

D O I：

10.1149/1.3502439

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The electrochemical nucleation and growth of copper on a ruthenium-tantalum (RuTa) alloy has been studied using galvanostatic methods. The experimental results show that the island density is highly dependent on the bath composition and deposition parameters. High island density was achieved with higher applied current, addition of suppressor and low copper concentration in the plating bath.

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页码：9 / 16

页数：8

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