Origin of the visible light absorption of GaN-Rich Ga1-xZnxN1-xOx (x=0.125) solid solution

被引:49
作者
Wei, Wei [1 ]
Dai, Ying [1 ]
Yang, Kesong [1 ]
Guo, Meng [1 ]
Huang, Baibiao [1 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1021/jp804146a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure, electronic, and optical properties of GaN-rich Ga1-x,ZnxN1-xOx (x = 0.125) solid solution have been systemically by means of density functional theory calculations (DFT) within the generalized gradient approximation (GGA). Our calculated results indicate that between the N 2p and Zn 3d states there exists a strong p-d coupling, which results in a narrower band gap than that of GaN. According to our calculation, the narrowed band gap of the solid solution leads to the absorption of visible light and thus results in the photocatalytic activity under visible light. We also found that the position of the O atom has an obvious effect on the band gap of the solid solution. These results can give an explanation for the origin of the visible light activity of the solid solution and are in agreement with experimental observation.
引用
收藏
页码:15915 / 15919
页数:5
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