High performance ZnO nanowire field effect transistor

被引：5

作者：

Cha, SN ^{[1
]}

Jang, JE ^{[1
]}

Choi, Y ^{[1
]}

Ho, GW ^{[1
]}

Kang, DJ ^{[1
]}

Hasko, DG ^{[1
]}

Welland, ME ^{[1
]}

Amaratunga, GAJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2005年

关键词：

D O I：

10.1109/ESSDER.2005.1546624

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 mu S, a mobility of 450 cm(2)/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 10(6).

引用

页码：217 / 220

页数：4

共 23 条

[1] PHOTO-VOLTAIC PROPERTIES OF ZNO-CDTE HETEROJUNCTIONS PREPARED BY SPRAY PYROLYSIS [J].