High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

被引：40
作者：
Lin, CW [1 ]
Cheng, LJ
Lu, YL
Lee, YS
Cheng, HC
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[2] Ind Technol Res Inst, Elect Res & Serv Org, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 06期
关键词：
D O I：
10.1109/55.924838
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with recessed-channel (RC) structure, The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical char acteristics as compared with the conventional ones. The average field-effect mobility above 300 cm(2)/V-s and on/off current ratio higher than 10(9) were achieved in these RC-structure devices, In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.
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页码：269 / 271
页数：3
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