TEM observations of the coexistence of perfect and dissociated dislocations in SiC under high stress

被引:14
作者
Demenet, JL [1 ]
Milhet, X [1 ]
Rabier, J [1 ]
机构
[1] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86962 Futuroscope, France
来源
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 6 | 2005年 / 2卷 / 06期
关键词
D O I
10.1002/pssc.200460541
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
TEM observations of the microstructure of 4H-silicon carbide deformed at 150 degrees C under 5 GPa are reported which confirm the coexistence of perfect and dissociated dislocations under such conditions. It is argued that dislocations are nucleated as perfect dislocations in the shuffle set, then they cross-slip in the more stable glide set where they dissociate into partials.
引用
收藏
页码:1987 / 1991
页数:5
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