Enhanced device performances of WSe2-MoS2 van der Waals junction p-n diode by fluoropolymer encapsulation

被引：81

作者：

Jeon, Pyo Jin ^{[1
]}

Min, Sung-Wook ^{[1
]}

Kim, Jin Sung ^{[1
]}

Raza, Syed Raza Ali ^{[1
]}

Choi, Kyunghee ^{[1
]}

Lee, Hee Sung ^{[1
]}

Lee, Young Tack ^{[2
]}

Hwang, Do Kyung ^{[2
]}

Choi, Hyoung Joon ^{[1
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] KIST, Interface Control Res Ctr, Future Convergence Res Technol Div, Seoul 136791, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2015年 / 3卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

BIAS LEAKAGE CURRENT; SURFACE-CHEMISTRY; LAYER MOS2; WSE2; GATE; TRANSISTORS; MONOLAYERS;

D O I：

10.1039/c4tc02961e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two-dimensional heterojunction diodes with WSe2 and MoS2 nanoflakes respectively as p-and n-type semiconductors were fabricated on both glass and SiO2/p(+)-Si by direct imprinting. Superior electrostatic and dynamic performances were acquired from the diode on glass when an electric dipole-containing fluoropolymer was employed for encapsulation: forward and reverse current toward ideal behavior, enhanced aging/ambient stability, and improved dynamic rectification resulted.

引用

页码：2751 / 2758

页数：8

共 40 条

[1]

[Anonymous], SMALL

[2]

[Anonymous], DEVICE ELECT INTEGRA

[3]

Baugher BWH, 2014, NAT NANOTECHNOL, V9, P262, DOI [10.1038/NNANO.2014.25, 10.1038/nnano.2014.25]

[4] Influence of Substrate Surface Chemistry on the Performance of Top-Gate Organic Thin-Film Transistors [J].

Boudinet, Damien ;

Benwadih, Mohammed ;

Altazin, Stephane ;

Verilhac, Jean-Marie ;

De Vito, Eric ;

Serbutoviez, Christophe ;

Horowitz, Gilles ;

Facchetti, Antonio .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (26) :9968-9971

[5] Electroluminescence and Photocurrent Generation from Atomically Sharp WSe2/MoS2 Heterojunction p-n Diodes [J].

Cheng, Rui ;

Li, Dehui ;

Zhou, Hailong ;

Wang, Chen ;

Yin, Anxiang ;

Jiang, Shan ;

Liu, Yuan ;

Chen, Yu ;

Huang, Yu ;

Duan, Xiangfeng .

NANO LETTERS, 2014, 14 (10) :5590-5597

[6] Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors [J].

Cho, Kyungjune ;

Park, Woanseo ;

Park, Juhun ;

Jeong, Hyunhak ;

Jang, Jingon ;

Kim, Tae-Young ;

Hong, Woong-Ki ;

Hong, Seunghun ;

Lee, Takhee .

ACS NANO, 2013, 7 (09) :7751-7758

[7] Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors [J].

Choi, Kyunghee ;

Lee, Young Tack ;

Min, Sung-Wook ;

Lee, Hee Sung ;

Nam, Taewook ;

Kim, Hyungjun ;

Im, Seongil .

JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (47) :7803-7807

[8] Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes [J].

Chuang, Steven ;

Kapadia, Rehan ;

Fang, Hui ;

Chang, Ting Chia ;

Yen, Wen-Chun ;

Chueh, Yu-Lun ;

Javey, Ali .

APPLIED PHYSICS LETTERS, 2013, 102 (24)

[9] ELECTRONIC-STRUCTURE OF MOSE2, MOS2, AND WSE2 .1. BAND-STRUCTURE CALCULATIONS AND PHOTOELECTRON-SPECTROSCOPY [J].

COEHOORN, R ;

HAAS, C ;

DIJKSTRA, J ;

FLIPSE, CJF ;

DEGROOT, RA ;

WOLD, A .

PHYSICAL REVIEW B, 1987, 35 (12) :6195-6202

[10] Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].

Coleman, Jonathan N. ;

Lotya, Mustafa ;

O'Neill, Arlene ;

Bergin, Shane D. ;

King, Paul J. ;

Khan, Umar ;

Young, Karen ;

Gaucher, Alexandre ;

De, Sukanta ;

Smith, Ronan J. ;

Shvets, Igor V. ;

Arora, Sunil K. ;

Stanton, George ;

Kim, Hye-Young ;

Lee, Kangho ;

Kim, Gyu Tae ;

Duesberg, Georg S. ;

Hallam, Toby ;

Boland, John J. ;

Wang, Jing Jing ;

Donegan, John F. ;

Grunlan, Jaime C. ;

Moriarty, Gregory ;

Shmeliov, Aleksey ;

Nicholls, Rebecca J. ;

Perkins, James M. ;

Grieveson, Eleanor M. ;

Theuwissen, Koenraad ;

McComb, David W. ;

Nellist, Peter D. ;

Nicolosi, Valeria .

SCIENCE, 2011, 331 (6017) :568-571

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