Room-Temperature Gold-Gold Bonding Method Based on Argon and Hydrogen Gas Mixture Atmospheric-Pressure Plasma Treatment for Optoelectronic Device Integration

被引：23

作者：

Higurashi, Eiji ^{[1
]}

Yamamoto, Michitaka ^{[1
]}

Sato, Takeshi ^{[1
]}

Suga, Tadatomo ^{[1
]}

Sawada, Renshi ^{[2
]}

机构：

[1] Univ Tokyo, Tokyo 1138656, Japan

[2] Kyushu Univ, Fukuoka 8190395, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2016年 / E99C卷 / 03期

关键词：

heterogeneous integration; low-temperature bonding; surface-activated bonding; atmospheric-pressure plasma; optical microsystems; FILMS;

D O I：

10.1587/transele.E99.C.339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature bonding methods of optoelectronic chips, such as laser diodes (LD) and photodiode (PD) chips, have been the focus of much interest to develop highly functional and compact optoelectronic devices, such as microsensors and communication modules. In this paper, room-temperature bonding of the optoelectronic chips with Au thin film to coined Au stud bumps with smooth surfaces (R-a: 1.3 nm) using argon and hydrogen gas mixture atmospheric-pressure plasma was demonstrated in ambient air. The die-shear strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of the light-current-voltage characteristics of the LD chips and the dark current-voltage characteristics of the PD chips indicated no degradation after bonding.

引用

页码：339 / 345

页数：7

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