Electronic properties of GaxIn1-xP from pseudopotential calculations

被引：29
|
作者：
Bouarissa, Nadir [1 ]
机构：
[1] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 124卷 / 01期
关键词：
Electronic properties; GaInP alloys; Pseudopotentials; BINARY (GASB)(1-X)(INAS)(X) CRYSTALS; MULTIPLE-QUANTUM-WELLS; V QUATERNARY ALLOYS; BAND-STRUCTURE; CHARGE-DENSITIES; EFFECTIVE MASSES; COMPOUND SEMICONDUCTORS; HYDROSTATIC-PRESSURE; LATTICE PROPERTIES; LASER-DIODES;
D O I：
10.1016/j.matchemphys.2010.06.043
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Based on a pseudopotential scheme within the virtual crystal approximation, we present a theoretical investigation of the electronic properties of GaxIn1-xP. The effect of alloy disorder on energy band-gaps has been examined and found to be not negligible. The composition dependence of energy band-gaps and electron effective mass is shown to be non-linear. In agreement with experiment, a direct-to-indirect band-gap crossover is found to occur close to x = 0.7. Besides, the electron valence and conduction charge densities for Ga0.50In0.50P derived from pseudopotential band-structure calculations are reported and trends in bonding and ionicity are discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：336 / 341
页数：6
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