Electronic properties of GaxIn1-xP from pseudopotential calculations

被引：29

作者：

Bouarissa, Nadir ^{[1
]}

机构：

[1] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 124卷 / 01期

关键词：

Electronic properties; GaInP alloys; Pseudopotentials; BINARY (GASB)(1-X)(INAS)(X) CRYSTALS; MULTIPLE-QUANTUM-WELLS; V QUATERNARY ALLOYS; BAND-STRUCTURE; CHARGE-DENSITIES; EFFECTIVE MASSES; COMPOUND SEMICONDUCTORS; HYDROSTATIC-PRESSURE; LATTICE PROPERTIES; LASER-DIODES;

D O I：

10.1016/j.matchemphys.2010.06.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Based on a pseudopotential scheme within the virtual crystal approximation, we present a theoretical investigation of the electronic properties of GaxIn1-xP. The effect of alloy disorder on energy band-gaps has been examined and found to be not negligible. The composition dependence of energy band-gaps and electron effective mass is shown to be non-linear. In agreement with experiment, a direct-to-indirect band-gap crossover is found to occur close to x = 0.7. Besides, the electron valence and conduction charge densities for Ga0.50In0.50P derived from pseudopotential band-structure calculations are reported and trends in bonding and ionicity are discussed. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：336 / 341

页数：6

共 50 条

[1] Electronic properties of GaxIn1-xP ternary alloy from first-principles
Abdollahi, Arash
Golzan, Mir Maqsood
Aghayar, Korosh
COMPUTATIONAL MATERIALS SCIENCE, 2016, 120 : 70 - 76
[2] Elastic properties of GaxIn1-xP semiconductor
Vyas, P. S.
Gajjar, P. N.
Thakore, B. Y.
Jani, A. R.
PHYSICA B-CONDENSED MATTER, 2011, 406 (23) : 4412 - 4416
[3] ELECTRICAL AND OPTICAL PROPERTIES OF GAXIN1-XP
BURMEIST.RA
GREENE, PE
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1969, 14 (03): : 416 - &
[4] DLP MODEL IN GAXIN1-XP=N ALLOYS CORRELATION WITH ELECTRONIC PROPERTIES
MARBEUF, A
GILLAUME, JC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) : 992 - 993
[5] Epitaxial lateral overgrowth of GaxIn1-xP toward direct GaxIn1-xP/Si heterojunction
Omanakuttan, Giriprasanth
Stergiakis, Stamoulis
Sahgal, Abhishek
Sychugov, Ilya
Lourdudoss, Sebastian
Sun, Yan-Ting
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
[6] Tailoring the electronic properties of GaxIn1-xP beyond simply varying alloy composition
Zhang, Yong
Jiang, C. -S.
Friedman, D. J.
Geisz, J. F.
Mascarenhas, A.
APPLIED PHYSICS LETTERS, 2009, 94 (09)
[7] Growth and structural properties of epitaxial GaxIn1-xP on InP
1737, (71):
[8] CATHODOLUMINESCENCE STUDIES OF GAXIN1-XP
BAILEY, SJ
EADES, JA
OLSON, JM
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 761 - 765
[9] CATHODOLUMINESCENCE OF GAXIN1-XP ALLOYS
MABBITT, AW
SOLID STATE COMMUNICATIONS, 1971, 9 (03) : 245 - &
[10] CATHODOLUMINESCENCE STUDIES OF GAXIN1-XP
BAILEY, SJ
EADES, JA
OLSON, JM
MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 761 - 765

← 1 2 3 4 5 →