Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon

被引：4

作者：

Misiuk, A

Surma, B

Bak-Misiuk, J

Antonova, IV

Smagulova, SA

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Inst Semicond Phys, Novosibirsk 630090, Russia

[5] Yakutsk State Univ, Yakutsk, Russia

来源：

VACUUM | 2005年 / 77卷 / 04期

关键词：

silicon; oxygen; electron irradiation; annealing; high pressure; defects;

D O I：

10.1016/j.vacuum.2004.09.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The defect structure of electron-irradiated Czochralski-grown silicon (electron doses 10(18)-10(21) m(-2), at 2.5 MeV) was found to change during high-temperature annealing under hydrostatic pressures up to 1.2GPa with treated samples showing a retardation of oxygen precipitation in the lattice. This likely arises from the formation of radiation-induced defects such as VO and VO2, as well as the effect of the applied pressure on both the concentration and diffusivity of oxygen and silicon interstitials that occur within the temperature range of 1070-1400 K. (c) 2004 Elsevier Ltd. All rights reserved.

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收藏

页码：513 / 517

页数：5

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