Hall effect in La1-xSrxMnO3

The Hall effect and its systematic variation with doping level(x) and temperature have been investigated for crystals of La1-xSrxMnO3 (0.18 less than or equal to x less than or equal to 0.50) with perovskite structure. The ordinary Hall coefficient (R-H) at 4.2 K indicates that the carrier is a hole, and that its density (n) is nearly n independent (R-H approximate to 0.4 cm(3)/C or n approximate to 1 hole/Mn site) even near the compositional insulator-metal phase boundary. The anomalous part of the Hall effect, which originates from the asymmetric scattering of charge carriers by local spin moments, is negative and strongly x and T dependent. The anomalous Hall coefficient was found to scale with 3/2 power of the change of magnetization irrespective of x. [S0163-1829(98)03326-8].