Electronic structure of CeFeAsO1-xFx (x=0, 0.11, and 0.12)

被引:27
作者
Bondino, F. [2 ]
Magnano, E. [2 ]
Booth, C. H. [3 ]
Offi, F. [4 ,5 ]
Panaccione, G. [2 ]
Malvestuto, M. [6 ]
Paolicelli, G. [7 ]
Simonelli, L. [8 ]
Parmigiani, F. [2 ,9 ]
McGuire, M. A. [10 ]
Sefat, A. S. [10 ]
Sales, B. C. [10 ]
Jin, R. [1 ,10 ]
Vilmercati, P. [1 ]
Mandrus, D. [10 ]
Singh, D. J. [10 ]
Mannella, N. [1 ]
机构
[1] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA
[2] IOM CNR, Lab TASC, I-34149 Trieste, Italy
[3] Lawrence Berkeley Natl Lab, Div Chem Sci, Berkeley, CA 94720 USA
[4] Univ Roma Tre, CNISM, I-00146 Rome, Italy
[5] Univ Roma Tre, Dipartimento Fis, I-00146 Rome, Italy
[6] Sincrotrone Trieste SCpA, I-34149 Trieste, Italy
[7] CNR INFM, Natl Res Ctr S3, I-41100 Modena, Italy
[8] European Synchrotron Radiat Facil, F-38042 Grenoble, France
[9] Univ Trieste, Dipartimento Fis, I-34124 Trieste, Italy
[10] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
X-RAY-ABSORPTION; SUPERCONDUCTIVITY; PHOTOEMISSION; SPECTROSCOPY;
D O I
10.1103/PhysRevB.82.014529
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report an extensive study on the intrinsic bulk electronic structure of the high-temperature superconductor CeFeAsO0.89F0.11 and its parent compound CeFeAsO by soft and hard x-ray photoemissions, x-ray absorption, and soft x-ray emission spectroscopies. The complementary surface/bulk probing depth, and the elemental and chemical sensitivity of these techniques allow resolving the intrinsic electronic structure of each element and correlating it with the local structure, which has been probed by extended x-ray absorption fine-structure spectroscopy. The measurements indicate a predominant 4f(1) (i.e., Ce3+) initial-state configuration for cerium and an effective valence-band-to-4f charge-transfer screening of the core hole. The spectra also reveal the presence of a small Ce f(0) initial-state configuration, which we assign to the occurrence of an intermediate-valence state. The data reveal a reasonably good agreement with the partial density of states as obtained in standard density-functional calculations over a large energy range. Implications for the electronic structure of these materials are discussed.
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页数:11
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