Self-propagating high temperature synthesis of yellow-emitting Ba2Si5N8:Eu2+ phosphors for white light-emitting diodes

被引：70

作者：

Piao, Xianqing ^{[1
]}

Machida, Ken-Ichi ^{[1
]}

Horikawa, Takashi ^{[1
]}

Hanzawa, Hiromasa ^{[1
]}

机构：

[1] Osaka Univ, Ctr Adv Sci & Innovat, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 04期

关键词：

D O I：

10.1063/1.2760038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-performance nitride phosphors, Ba2Si5N8 : Eu2+, were prepared by the self-propagating high temperature synthesis method. The broadband absorption in the range of 380-500 nm indicated that the resultant phosphors were effectively excited by an InGaN blue light-emitting diode (400/470 nm). The emission peak position of Ba2-xEuxSi5N8 (x=0-0.3) varied from 572 to 650 nm with increasing Eu2+ concentration, and the intensity was maximized at x=0.04. The optimized sample gave a strong yellow emission peak at 580 nm. The redshifting behavior of the emission band was attributed to three factors: energy migration, crystal field strengthening, and reabsorption.

引用

页数：3

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