Power dependence of NF3 plasma stability for in situ chamber cleaning

被引：10

作者：

Ji, B ^{[1
]}

Elder, DL ^{[1
]}

Yang, JH ^{[1
]}

Badowski, PR ^{[1
]}

Karwacki, EJ ^{[1
]}

机构：

[1] Air Prod & Chem Inc, Allentown, PA 18195 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 08期

关键词：

D O I：

10.1063/1.1688994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the stability of NF3 plasmas for in situ chamber cleaning in a production plasma-enhanced chemical vapor deposition reactor. An rf power threshold, normalized by NF3 molar number (P-nn) and NF3 flow rate (P-nf), is observed to be PnnPnf=39 (W/mu mol)(W/sccm) for stable plasmas with high NF3 destruction efficiency. This is rationalized by the energy required to maintain sufficient electron-ion pair creation in an electronegative discharge. (C) 2004 American Institute of Physics.

引用

收藏

页码：4446 / 4451

页数：6

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