Impact of pellicle damage on patterning characteristics in ArF lithography

被引：4

作者：

Miyazaki, J ^{[1
]}

Uematsu, M ^{[1
]}

Ogawa, T ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Totsuka Ku, Yokohama, Kanagawa 2440817, Japan

来源：

OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2 | 1999年 / 3679卷

关键词：

ArF lithography; mask; pellicle; durability; CD control;

D O I：

10.1117/12.354364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pellicle durability and the effect of damaged pellicles on lithographic performance were investigated. It was found that pellicles lose their thickness but do not change their optical constant in an air atmosphere when irradiated by an ArF laser. Changes in pellicle thickness cause a wave aberration change. It was confirmed that this damage affects Lithographic performance in simulations and experiments. It was estimated that transmittance of a 1% change causes a CD shift of 0.6 nm. We have also found that a lifetime of latest pellicle is over one year. Pellicles are now available with enough durability, as the pellicle durability has been greatly improved.

引用

页码：530 / 540

页数：5