Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies

被引：114

作者：

Nguyen, C ^{[1
]}

Nguyen, NX ^{[1
]}

Grider, DE ^{[1
]}

机构：

[1] HRL LABS LLC, Malibu, CA USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 16期

关键词：

D O I：

10.1049/el:19990957

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the discrepancy between the measured microwave power performance of GaN MODFETs and the prediction based on the DC characteristics is caused by the trapping of mobile electrons in the channel under large-signal modulation. this phenomenon manifests itself in the compression of the drain current. The strong dependence of the level of current compression on the gate bias voltage indicates that carrier trapping take place in the AlGaN barrier or at the surface ol the device.

引用

页码：1380 / 1382

页数：3

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