High-quality crystallinity controlled ALD TiO2 for waveguiding applications

被引:22
作者
Alasaarela, Tapani [1 ]
Karvonen, Lasse [1 ]
Jussila, Henri [1 ]
Saynatjoki, Antti [1 ]
Mehravar, Soroush [2 ]
Norwood, Robert A. [2 ]
Peyghambarian, Nasser [2 ]
Kieu, Khanh [2 ]
Tittonen, Ilkka [1 ]
Lipsanen, Harri [1 ]
机构
[1] Aalto Univ Sch Elect Engn, Dept Micro & Nanosci, Aalto 00076, Finland
[2] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
基金
芬兰科学院;
关键词
ATOMIC LAYER DEPOSITION; OXIDE THIN-FILMS; TITANIUM-DIOXIDE; MORPHOLOGY; OZONE; GENERATION; GROWTH; GUIDES;
D O I
10.1364/OL.38.003980
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate a novel atomic layer deposition (ALD) process to make high-quality nanocrystalline titanium dioxide (TiO2) with intermediate Al2O3 layers to limit the crystal size. The process is based on titanium chloride (TiCl4) + water and trimethyl aluminum (TMA) + ozone processes at 250 degrees C deposition temperature. The waveguide losses measured using a prism coupling method for 633 and 1551 nm wavelengths are as low as 0.2 +/- 0.1 dB/mm with the smallest crystal size, with losses increasing with crystal size. In comparison, plain TiO2 deposited at 250 degrees C without the intermediate Al2O3 layers shows high scattering losses and is not viable as waveguide material. The third-order optical nonlinearity decreases with smaller crystal size as verified by third-harmonic generation microscopy but still remains high for all samples. Crystallinity controlled ALD-grown TiO2 is an excellent candidate for various optical applications, where good thermal stability and high third-order optical nonlinearity are needed. (C) 2013 Optical Society of America
引用
收藏
页码:3980 / 3983
页数:4
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