A Dual-gate Subharmonic Injection-Locked Oscillator using 0.5 μm GaAs pHEMT Technology

被引：0
|
作者：
Huang, Fan-Hsiu [1 ]
Tsai, Meng-Hsiu [1 ]
Chang, Hong-Yeh [1 ]
Hsin, Yue-Ming [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, 300 Jhongda Rd, Jhongli, Taoyuan County, Taiwan
来源：
2010 ASIA-PACIFIC MICROWAVE CONFERENCE | 2010年
关键词：
Dual-gate; enhanced/depletion-mode HEMT; injection locked oscillator; subharmonic injection locking; LOCKING;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-gate subharmonic injection-locked oscillator (SILO) designed for Q-band millimeter-wave applications has been implemented in 0.5 mu m GaAs pHEMT process. Based on the dual-gate circuit topology, a wide-bandwidth and high frequency negative resistance can be easily obtained for determining the free-running oscillation frequency by a proper resonator. The free-running frequency is designed around 49 GHz. The power consumption is 75 mW from a 5 V supply. The measured frequency tuning range is from 48.7 GHz to 49.7 GHz with 8 dBm output power. By injecting a 2(nd)-order subharmonic signal into the oscillator without any frequency tuning, the maximum locking range can reach to be 2.8 GHz. The measured output phase noise under locking status is close to -121dBc/Hz at 1-MHz offset frequency.
引用
收藏
页码：940 / 943
页数：4
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