Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method

被引：40

作者：

He, Nuotian ^{[1
]}

Tang, Huili ^{[1
]}

Liu, Bo ^{[1
]}

Zhu, Zhichao ^{[1
]}

Li, Qiu ^{[1
]}

Guo, Chao ^{[1
]}

Gu, Mu ^{[1
]}

Xu, Jun ^{[1
]}

Liu, Jinliang ^{[2
]}

Xu, Mengxuan ^{[2
]}

Chen, Liang ^{[2
]}

Ouyang, Xiaoping ^{[2
]}

机构：

[1] Tongji Univ, MOE Key Lab Adv Microstruct Mat, Sch Phys Sci & Engn, Inst Adv Study, Shanghai 200092, Peoples R China

[2] Northwest Inst Nucl Technol, Radiat Detect Res Ctr, Xian 710024, Shaanxi, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2018年 / 888卷

关键词：

beta-Ga2O3; Scintillator; Ultra-fast; LUMINESCENCE; IONS;

D O I：

10.1016/j.nima.2018.01.023

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this investigation, beta-Ga2O3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, beta-Ga2O3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production. (C) 2018 Elsevier B.V. All rights reserved.

引用

页码：9 / 12

页数：4

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