Photoluminescence in porous silicon produced as a result of intense laser excitation

被引：0
作者：
Shatkovskii, E
Vertsinskii, Y
机构：
[1] Institute of Semiconductor Physics
来源：
SEMICONDUCTORS | 1997年 / 31卷 / 05期
关键词：
QUANTUM CONFINEMENT; OPTICAL-PROPERTIES; LUMINESCENCE; ABSORPTION; SPECTROSCOPY; CRYSTALLITES; DEPENDENCE; SILOXENE; FILMS;
D O I：
10.1134/1.1187201
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The integrated photoluminescence in porous p-type silicon produced as a result of intense excitation with second harmonic (lambda=532 nm) pulses from a YAG:Nd3+ laser has been investigated. It was established that in the intensity range corresponding to quasistationary excitation conditions the radiation is characterized by a power-law dependence I(rad)similar to I-2/3. As the excitation intensity increases, the quantum yield beta decreases similar to I-1/3. It is shown that the main radiation of porous silicon is due to a bimolecular recombination process. (C) 1997 American Institute of Physics.
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页码：503 / 505
页数：3
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