High performance phosphorus-free 1.3 μm AlGaInAs InP MQW lasers

被引：4

作者：

Pan, JW ^{[1
]}

Chen, MH ^{[1
]}

Chyi, JI ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

quantum well laser; leakage current; characteristic temperature;

D O I：

10.1016/S0022-0248(98)01490-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Strain-compensated 1.3 mu m AlGaInAs/InP multiquantum well (MQW) lasers with various doping concentrations in the p-AlInAs cladding layer are systematically studied. The lasers with higher doping exhibit lower series resistance, higher maximum output power, and better temperature characteristics, i.e. characteristic temperature as high as 90 K and degradation in slope efficiency as low as - 0.66 dB, in the temperature range of 25 degrees C-70 degrees C. This is attributed to the significant reduction of electron leakage over the p-cladding layer. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：923 / 926

页数：4

相关论文

共 14 条

[1]

AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, P127

[2] VARIATION OF INTERVALENCE BAND ABSORPTION WITH HOLE CONCENTRATION IN P-TYPE INP [J].

CASEY, HC ;

CARTER, PL .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :82-83

[3] Low-threshold and high-temperature operation of InGaAlAs-InP lasers [J].

Chen, TR ;

Chen, PC ;

Ungar, J ;

Newkirk, MA ;

Oh, S ;

BarChaim, N .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (01) :17-18

[4] 1.5 mu m wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power [J].

Garbuzov, D ;

Xu, L ;

Forrest, SR ;

Menna, R ;

Martinelli, R ;

Connolly, JC .

ELECTRONICS LETTERS, 1996, 32 (18) :1717-1719

[5] SHORT-WAVELENGTH INGAALP VISIBLE LASER-DIODES [J].

HATAKOSHI, G ;

ITAYA, K ;

ISHIKAWA, M ;

OKAJIMA, M ;

UEMATSU, Y .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1476-1482

[6] STRAINED GAINAS-ALGAINAS 1.5-MU-M-WAVELENGTH MULTI-QUANTUM-WELL LASERS LOADED WITH AAINAS-ALINAS MULTIQUANTUM BARRIERS AT THE P-SIDE OPTICAL CONFINEMENT LAYER [J].

IRIKAWA, M ;

SHIMIZU, H ;

FUKUSHIMA, T ;

NISHIKATA, K ;

HIRAYAMA, Y .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :285-292

[7] LOW-THRESHOLD-CURRENT-DENSITY 1.5-MU-M LASERS USING COMPRESSIVELY STRAINED INGAASP QUANTUM-WELLS [J].

OSINSKI, JS ;

ZOU, Y ;

GRODZINSKI, P ;

MATHUR, A ;

DAPKUS, PD .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (01) :10-13

[8] Theoretical study of the temperature dependence of 1.3-mu m AlGaInAs-InP multiple-quantum-well lasers [J].

Pan, JW ;

Chyi, JI .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (12) :2133-2138

[9] Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier [J].

Pan, JW ;

Chau, KG ;

Chyi, JI ;

Tu, YK ;

Liaw, JW .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2090-2092

[10] 1.57-MU-M STRAINED-LAYER QUANTUM-WELL GAINALAS RIDGE-WAVE-GUIDE LASER-DIODES WITH HIGH-TEMPERATURE (130-DEGREES-C) AND ULTRAHIGHSPEED (17 GHZ) PERFORMANCE [J].

STEGMULLER, B ;

BORCHERT, B ;

GESSNER, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :597-599