Electrical characteristics of Mg-doped p-GaN treated with the electrochemical potentiostatic activation method

被引：14

作者：

Oh, Munsik ^{[1
]}

Lee, Jeong Ju ^{[2
]}

Lee, June Key ^{[2
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

[2] Chonnam Natl Univ, Dept Mat Sci & Engn, Kwangju 500757, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 585卷

基金：

新加坡国家研究基金会;

关键词：

Electrochemical potentiostatic activation; p-GaN; Mg-H complex; Hopping conduction; LOW-TEMPERATURE ACTIVATION; NONALLOYED OHMIC CONTACTS; IRRADIATION; CONDUCTION; LAYERS;

D O I：

10.1016/j.jallcom.2013.09.154

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electrical characteristics and carrier transport mechanism of Mg-doped p-GaN treated with the electrochemical potentiostatic activation (EPA) method was investigated. The EPA method resulted in lower H concentration up to 56% with a subsequent increase in hole concentration and improved ohmic contacts. The temperature-dependent electrical resistivity of the reference p-GaN followed a similar to T (1/4) dependence, i.e., hopping conduction, while that of the EPA-treated sample began to follow a similar to T (1) behavior involving band conduction. This was due to the reduced density of deep-level states associated with the Mg-H complex, e. g., from 1.28 x 10(19) to similar to 7.50 x 10(18) cm (3) after EPA treatment. The increase in the hole concentration was responsible for the enhanced ohmic contact via tunneling. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：414 / 417

页数：4

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