Dielectric Properties and Structures of Zn-doped Barium Zirconate Titanate Films

被引：4

作者：

Liu, Xingbing ^{[1
]}

Deng, Xiaoling ^{[1
]}

Liu, Kaihua ^{[1
]}

Cai, Wei ^{[1
]}

Fu, Chunlin ^{[1
]}

机构：

[1] Chongqing Univ Sci & Technol, Sch Met & Mat Engn, Chongqing 401331, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2014年 / 150卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Barium zirconium titanate; films; zinc; dielectric properties; doping; THIN-FILMS; OPTICAL-PROPERTIES; MICROSTRUCTURE; BEHAVIOR;

D O I：

10.1080/10584587.2014.874258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Zn-doped Ba(Zr0.2Ti0.8)O-3 (BZT) films were prepared by sol-gel processing on Pt/Ti/SiO2/Si substrates. The crystal structures, surface morphology, dielectric properties of Zn-doped BZT films were investigated as a function of Zn content. It is found that the films belong to the perovskite structure. In addition, the dielectric constant decreases at first and then increases with the increasing of Zn content, but the dielectric loss decreases with the increasing of Zn content at room temperature. Finally, it also can be found that the Curie temperature of the Zn-doped BZT films is lower than that of the pure BZT films.

引用

页码：66 / 74

页数：9

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